Abstract
We used kinetic Monte Carlo (kMC) simulations to investigate the development over time of a non-classical crystallization system featuring many charged nanoparticles (CNPs) in the gas phase; we studied the abnormal growth of deposited silicon (Si) particles during chemical Si vapor deposition. We identified three parameters associated with abnormal growth of deposited CNPs. The kMC results revealed that abnormal, deposited CNP growth was accentuated when the CNP charge in the gas phase was balanced. In addition, a high CNP density (an elevated particle volume fraction) in the gas phase favored abnormal growth of deposited CNPs, as did a faster gas flow velocity, even when the charge signs of CNPs in the gas phase were not balanced.
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Acknowledgements
This work was partially supported by Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (MSIT) (No. NRF-2013M3A6B1078874), the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A5A6017701), BK21PLUS SNU Materials Division for Educating Creative Global Leaders (21A20131912052), and Samsung Electronics Co., Ltd.
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Byun, M.G., Park, J.H., Yang, J.W. et al. The Effects of Electrostatic Interactions on Abnormal Growth of Particles Deposited by Charged Nanoparticles During Chemical Vapor Deposition of Silicon. Electron. Mater. Lett. 19, 218–228 (2023). https://doi.org/10.1007/s13391-022-00390-4
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DOI: https://doi.org/10.1007/s13391-022-00390-4