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Unraveling Adsorption Behaviors of Levelers for Bottom-Up Copper Filling in Through-Silicon-Via

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A Correction to this article was published on 29 November 2022

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Abstract

A leveler is one of the most important additives for achieving defect-free Cu-filled through-silicon-via (TSV). In this study, we experimentally investigated TSV filling performance in the presence of three levelers, i.e., pyrrolidone, imine and diazonium. A detailed analysis of the mass change in the levelers from EQCM conclusively verified that the diazonium was strongly adsorbed on the copper surface at a current density of 10 mA/cm2. This behavior was attributed to its unique molecular structure, with a positively charged nitrogen and a carbocation from resonance structure. Observations of via filling suggested that the bottom-up fill performance was obtained in the presence of diazonium. The possible mechanism responsible for defect-free TSV filling is discussed in terms of the adsorption behaviors of levelers, which is dependent on their molecular structures.

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Acknowledgements

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020M3H4A3081759).

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Authors and Affiliations

  1. Heat & Surface Technology R&D Department, Korea Institute of Industrial Technology (KITECH), 21999, Incheon, Republic of Korea

    SangHoon Jin, Sung-Min Kim, Yugeun Jo, Woon Young Lee & Min Hyung Lee

  2. Department of Materials Engineering, Korea Aerospace University, 10540, Goyang, Republic of Korea

    SangHoon Jin, Yugeun Jo & Sang-Yul Lee

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  1. SangHoon Jin
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  2. Sung-Min Kim
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  3. Yugeun Jo
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Correspondence to Sung-Min Kim, Sang-Yul Lee or Min Hyung Lee.

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The original online version of this article was revised due to the reference list published incorrectly. The references 31-33 should be renumbered to 3-5 in the list.

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Jin, S., Kim, SM., Jo, Y. et al. Unraveling Adsorption Behaviors of Levelers for Bottom-Up Copper Filling in Through-Silicon-Via. Electron. Mater. Lett. 18, 583–591 (2022). https://doi.org/10.1007/s13391-022-00364-6

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