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Preparation of Highly (002) Oriented Ti Films on a Floating Si (100) Substrate by RF Magnetron Sputtering

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Abstract

The possibility of preparing highly (002) oriented Ti films on the Si (100) substrate was studied using RF sputtering. The deposition behavior was compared between floating and grounded substrates at room temperature. Highly (002) oriented Ti films could be successfully prepared on the floating Si (100) substrate, which was revealed by X-ray diffraction and high resolution transmission electron microscope. To understand the different deposition behavior between floating and grounded substrates, the incident energy of ions during RF sputtering was estimated from the substrate temperature measured by the K-type thermocouple. The incident energy on the floating substrate was lower by 20% than that on the grounded substrate. It was suggested that the lower incident energy on the floating substrate would be responsible for the deposition of highly (002) oriented Ti films at room temperature.

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Acknowledgements

This work was supported by Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (MSIT) (No. NRF-2013M3A6B1078874) and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2015R1A5A1037627).

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  1. Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea

    Ji Hye Kwon, Du Yun Kim, Kun-Su Kim & Nong-Moon Hwang

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  1. Ji Hye Kwon
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  2. Du Yun Kim
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Correspondence to Nong-Moon Hwang.

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Kwon, J.H., Kim, D.Y., Kim, KS. et al. Preparation of Highly (002) Oriented Ti Films on a Floating Si (100) Substrate by RF Magnetron Sputtering. Electron. Mater. Lett. 16, 14–21 (2020). https://doi.org/10.1007/s13391-019-00182-3

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