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Low-Pressure Chemical Vapor Deposition Copper Nanodendrites Growth Design

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Abstract

In this paper, chemical vapor deposition (CVD) method was used to grow long crystalline dendrites of copper with controlled grain morphology and lengths of up to 1 \({{\rm \mu}}\)m. The grown copper nanodendrites (CuND) were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), Raman, and X-ray photoelectron spectroscopy (XPS) analyses. The influence of the methane and hydrogen concentrations during growth was evaluated. SEM and AFM results revealed the high-quality grain morphology. XPS studies showed sharp peaks after 900 eV which was attributed to the presence of CuND. Raman spectra revealed the characteristics band at 150, ~200, and ~600 cm−1 for CuND. Analysis of the marginal means showed that growth temperature and flow are the two most significant control variables and that flow has a two-level effect on the length of CuND. Similarly, at the highest flow rate, i.e., 15 sccm, the CVD led to the growth of longer CuNDs. In particular, the length of CuNDs was found to increase when the flow rate was increased from 5 to 15 sccm by keeping fixed the temperature at 900 \({{^\circ}}\)C and growth time for 30 min. Surprisingly, when the temperature was increased to 1000 \({{^\circ}}\)C at a flow rate of 5 sccm and growth time of 30 min, the length of CuNDs was slightly increased, while at high flow rate there is no change in the length.

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  1. National Nanotechnology Center, King Abdulaziz City for Science and Technology, P.O Box 6086, Riyadh, 11442, Saudi Arabia

    Hatem Abuhimd

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  1. Hatem Abuhimd
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Correspondence to Hatem Abuhimd.

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Abuhimd, H. Low-Pressure Chemical Vapor Deposition Copper Nanodendrites Growth Design. Arab J Sci Eng 42, 1371–1379 (2017). https://doi.org/10.1007/s13369-016-2246-8

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  • DOI: https://doi.org/10.1007/s13369-016-2246-8

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