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Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices

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Abstract

A spin-coating method was applied to obtain thinner and smoother PEO/LiClO4 polymer electrolyte films (EFs) with a lower level of crystallization than those obtained using a drop-casting method. When the applied frequency was as high as 10 kHz, the specific capacitance of such EFs with thicknesses of 1.5 μm was on the order of 1 μF∙cm−2, a value larger than most of the previously reported results achieved from the same material. We then combined the thin EFs with two-dimensional (2D) materials to fabricate a MoS2 transistor with a top gate right above the channel, defined by a shadow-mask method, and an inverter device. This transistor showed excellent static characteristics and the inverter device showed excellent switching performance at 100 Hz, which indicates a fast polarization response of the thin EFs. Such device architecture is suitable for future low power and flexible electronics based on 2D materials.

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Acknowledgements

This work was supported by the National Key Research and Development Program (No. 2016YFA0203900) and Natural Science Foundation of Shanghai (No. 17ZR1446700). P. Z. would like to acknowledge the National Natural Science Foundation of China (Nos. 61376093 and 61622401). W. B. and J. W. also acknowledge the support from the 1000 Talented Youth Plan.

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Authors and Affiliations

  1. State Key Laboratory of ASIC and System, Fudan University, Shanghai, 200433, China

    Wu Zan, Qiaochu Zhang, Hu Xu, Fuyou Liao, Zhongxun Guo, Jianan Deng, Jing Wan, Hao Zhu, Lin Chen, Qingqing Sun, Shijin Ding, Peng Zhou, Wenzhong Bao & David Wei Zhang

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Correspondence to Jing Wan or Wenzhong Bao.

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12274_2017_1945_MOESM1_ESM.pdf

Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices

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Zan, W., Zhang, Q., Xu, H. et al. Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices. Nano Res. 11, 3739–3745 (2018). https://doi.org/10.1007/s12274-017-1945-0

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  • DOI: https://doi.org/10.1007/s12274-017-1945-0

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