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Graphene Oxide/Poly(3-hexylthiophene) Nanocomposite Thin-Film Phototransistor for Logic Circuit Applications

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Abstract

Graphene is a sheet-structured material that lacks a forbidden band, being a good candidate for use in radiofrequency applications. We have elaborated graphene-oxide-doped poly(3-hexylthiophene) nanocomposite to increase the interlayer distance and thereby open a large bandgap for use in the field of logic circuits. Graphene oxide/poly(3-hexylthiophene) (GO/P3HT) nanocomposite thin-film transistors (TFTs) were fabricated on silicon oxide substrate by spin coating method. The current–voltage (I–V) characteristics of TFTs with various P3HT compositions were studied in the dark and under light illumination. The photocurrent, charge carrier mobility, subthreshold voltage, density of interface states, density of occupied states, and ION/IOFF ratio of the devices strongly depended on the P3HT weight ratio in the composite. The effects of white-light illumination on the electrical parameters of the transistors were investigated. The results indicated that GO/P3HT nanocomposite thin-film transistors have high potential for use in radiofrequency applications, and their feasibility for use in digital applications has been demonstrated.

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Authors and Affiliations

  1. Laboratory of Physics of Materials and Nanomaterials Applied at Environment: LaPhyMNE, Faculty of Sciences in Gabes, Gabes University, Erriadh City, Zrig, 6072, Gabès, Tunisia

    S. Mansouri & L. El Mir

  2. Faculté des Sciences et Techniques de Sidi Bouzid, Uniniversité de Kairouan, Kairouan, Tunisia

    S. Mansouri

  3. Department of Physics, Faculty of Arts and Sciences, Kirklareli University, Kirklareli, Turkey

    B. Coskun

  4. Department of Physics, College of Sciences, Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, 11623, Saudi Arabia

    L. El Mir

  5. Department of Chemistry, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  6. Research Center for Advanced Materials Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  7. Unit of Science and Technology, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  8. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia

    Ahmed Al-Ghamdi

  9. Nanoscience and Nanotechnology Laboratory, Fırat University, Elazığ, Turkey

    F. Yakuphanoglu

  10. Department of Physics, Faculty of Science, Fırat University, Elazığ, Turkey

    F. Yakuphanoglu

Authors
  1. S. Mansouri
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  2. B. Coskun
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  3. L. El Mir
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  4. Abdullah G. Al-Sehemi
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  5. Ahmed Al-Ghamdi
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  6. F. Yakuphanoglu
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Correspondence to S. Mansouri.

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Mansouri, S., Coskun, B., El Mir, L. et al. Graphene Oxide/Poly(3-hexylthiophene) Nanocomposite Thin-Film Phototransistor for Logic Circuit Applications. J. Electron. Mater. 47, 2461–2467 (2018). https://doi.org/10.1007/s11664-018-6081-4

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  • DOI: https://doi.org/10.1007/s11664-018-6081-4

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