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Wide and narrow bandgap semiconductors for power electronics: A new valuation

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Abstract

An advantage for some wide bandgap materials that is often overlooked is that the thermal coefficient of expansion (CTE) is better matched to the ceramics in use for electronic-packaging technology. The optimal choice for unipolar devices is GaN and the associated material system of GaN/AlGaN. The future optimal choice for bipolar devices at all power levels is C (diamond). New expressions, ɛ c=1.73×105 (EG)2.5 for direct-gap and ɛ c=2.38×105 (EG)2 for indirect-gap semiconductors, relating the critical-electric field for breakdown in abrupt junctions to the material bandgap energy, and associated new expressions for specific on-resistance in power semiconductor devices is shown to further support the use of wide bandgap materials. Some low-voltage, power-electronics applications are shown to benefit by the use of Ge, C, and GaSb.

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Abbreviations

CTE:

Coefficient of thermal expansion (ppm/K or µm/m·K)

EG :

Bandgap energy (eV)

ɛ(x):

Electric field as a function of position (V/cm)

ɛ c :

Critical-electric field (V/cm)

ɛ:

Permittivity (F/cm)

ɛ:

Relative permittivity

mo :

Electron rest mass (kg)

mn :

Electron density-of-states effective mass (kg)

ml :

Longitudinal electron density-of-states effective mass (in mo)

mt :

Transverse electron density-of-states effective mass (in mo)

mp :

Hole density-of-states effective mass (kg)

mh :

Heavy valence-band hole density-of-states effective mass (in mo)

ml :

Light valence-band hole density-of-states effective mass (in mo)

μe :

Electron conduction mobility (cm2/V·s)

μh :

Hole-conduction mobility (cm2/V·s)

NB :

Impurity-density concentration (cm−3)

ni :

Intrinsic-carrier concentration (cm−3)

RONsp :

Specific on-resistance (Ω·cm2)

σT :

Thermal conductivity (W/m·K)

VB :

Breakdown voltage (V)

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  1. Department of Electrical Engineering, University of South Carolina, 29208, Columbia, SC

    Jerry L. Hudgins

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  1. Jerry L. Hudgins
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Hudgins, J.L. Wide and narrow bandgap semiconductors for power electronics: A new valuation. J. Electron. Mater. 32, 471–477 (2003). https://doi.org/10.1007/s11664-003-0128-9

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  • DOI: https://doi.org/10.1007/s11664-003-0128-9

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