Abstract
Strategies to modulate the exciton dynamics in ultrathin two-dimensional (2D) semiconductors have always been an integral component in the bid towards improved optoelectronics and quantum photonic devices. The capability to non-destructively tune the relaxation dynamics, valley polarization, binding energies, and population ratio of various excitonic species has been well-sought for advanced applications. Through the rationale design of a WS2-ZnO hybrid platform, we present a distinct increment in the trion-to-exciton ratio for WS2 emission across a patterned heterostructure. The shift in dominant excitonic species arose due to the efficient charge segregation at the spatially confined interface of the type-II heterostructure. Owing to the charge transfer process, the resultant emission profile presents up to four times amplification in the trion-to-exciton ratio, with temperature variable trion binding energies up to 59 meV. Since trions possess non-zero charge and spin degrees of freedom, the provision of a higher density of trions with increased binding stability would encourage new opportunities for reproducible optoelectronics and quantum emitters.
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Acknowledgements
This work was supported by NRF-NUS Resilience and Growth Postdoctoral Fellowship (Grant No. R-144-000-471-281).
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Table S1 and Figures S1–S6. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.
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Leong, J.F., Lim, K.Y., Wu, X. et al. Selective enriching of trionic emission in a WS2-ZnO hybrid through type-II band alignment. Sci. China Inf. Sci. 66, 160405 (2023). https://doi.org/10.1007/s11432-022-3719-4
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DOI: https://doi.org/10.1007/s11432-022-3719-4