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The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature

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Abstract

Cu2WSe4 nanosheets were synthesized by hot-injection method and employed as interfacial layers between the p-Si and Au metal via spin coating technique. The capacitance–voltage (C–V) and conductance-voltage (G–V) measurements were performed on the Cu2WSe4/p-Si heterojunction device depending on wide range temperatures from 80 to 400 K by 40 K steps. The device exhibited decreasing capacitance behavior with increasing temperature at the inversion region because of the interface states and series resistance. The conductance values increased with increasing temperature owing to increasing free charge carriers. The series resistance (Rs) and interface states density (Nss) were extracted from C–V and G–V measurements and discussed in the details. The results highlighted that the electrical parameters are a strong function of the voltage and temperature. The Au/Cu2WSe4/p-Si device can be employed for controllable capacitor applications.

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Acknowledgements

The authors would like to thank to Selçuk University BAP office (Project Number 17401159) and Karamanoglu Mehmetbey University (Grand Number: 32-M-16) for Scientific Research Foundation.

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Authors and Affiliations

  1. Department of Electrical Electronic Engineering, Engineering Faculty, Igdir University, 76000, Igdir, Turkey

    Adem Koçyiğit

  2. Department of Physics, Faculty of Science, Selcuk University, 42130, Konya, Turkey

    Hayreddin Küçükçelebi

  3. Department of Metallurgical Science and Materials Engineering, Faculty of Engineering, Karamanoğlu Mehmetbey University, 70200, Karaman, Turkey

    Adem Sarılmaz & Faruk Ozel

  4. Karamanoglu Mehmetbey University, Scientific and Technological Research and Application Center, 70200, Karaman, Turkey

    Faruk Ozel

  5. Department of Biotechnology, Faculty of Science, Selcuk University, 42130, Konya, Turkey

    Murat Yıldırım

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  1. Adem Koçyiğit
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Koçyiğit, A., Küçükçelebi, H., Sarılmaz, A. et al. The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature. J Mater Sci: Mater Electron 30, 11994–12000 (2019). https://doi.org/10.1007/s10854-019-01553-0

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