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Improving the high-frequency magnetic properties of as-deposited CoFe films by ultra-low gas pressure

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Abstract

CoFe films without buffer layers were deposited at different ultra-low argon pressures ranging from 0.085 to 0.847 mTorr. This pressure range was one to two orders lower than the normal sputtering pressure. As a consequence, the static magnetic properties, including coercivity and magnetic anisotropy field, were improved with decrease argon pressure. The high-frequency permeability spectra showed that the resonance frequency and the damping factor of the films also reached optimal values at ultra-low pressure. Basing on atomic force microscopy observations, we attributed the excellent properties to the improved morphologies of the films and released internal stress.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China under Grant Nos. 61471096 and 51772047, and Science and Technology Department of Sichuan Province under Grant Nos. 2015JQ0031, 2016JQ0016 and 2016GZ0258.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Sichuan, China

    XiaoLi Tang, You Yu, Hua Su, HuaiWu Zhang, ZhiYong Zhong & YuLan Jing

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  1. XiaoLi Tang
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  2. You Yu
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  3. Hua Su
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Correspondence to XiaoLi Tang.

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Tang, X., Yu, Y., Su, H. et al. Improving the high-frequency magnetic properties of as-deposited CoFe films by ultra-low gas pressure. J Mater Sci 53, 3573–3580 (2018). https://doi.org/10.1007/s10853-017-1794-y

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