Abstract
This work proposes a high-linearity down-conversion mixer with a modified transconductance stage of Gilbert cell at about 120 GHz in a 55-nm CMOS process. The mixer attains at least 2 dBm input-referred 1 dB compression point (IP1dB) by adopting Gilbert cell with multiple gate transistors (MGTR) technology, source degeneration technology, and drain-gate parallel inductors. The improvement of traditional MGTR technology enables it to be applied in a sub-terahertz band and still has a certain effect on linearity improvement. Compared with other MGTR manufacturing, the improvement of linearity is no longer sensitive to bias voltage, which is helpful for practical applications. The measurement results show that the proposed mixer exhibits good linearity performance in a sub-terahertz band, and the frequency conversion loss is within an acceptable range. The RF, LO, and IF ports are measured to match 90–123 GHz,50–67 GHz, and 52–67 GHz, respectively. Under the consideration of a low-cost design, the DC power consumption of the proposed mixer is only 8.2 mW. The core chip occupies only 0.28 × 0.28 mm. This is the first application of MGTR mixers in a sub-terahertz band.
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References
Ma, Jianguo. "Design for Cost: The Key of Success for 5G and Beyond." IEEE Transactions on Microwave Theory and Techniques 68.1 (2020): 16-16.
Ding, Yongwang, and Ramesh Harjani. "A high-efficiency CMOS+ 22-dBm linear power amplifier." IEEE Journal of Solid-State Circuits 40.9 (2005): 1895-1900.
Wu, Chieh-Lin, and Chikuang Yu. "Amplification of nonlinearity in multiple gate transistor millimeter wave mixer for improvement of linearity and noise figure." IEEE Microwave and Wireless Components Letters 25.5 (2015): 310-312.
Wu, C-L, Y. H. Yun, and C. Yu. "High linearity 23-33 GHz SOI CMOS downconversion double balanced mixer." Electronics letters 47.23 (2011): 1283-1284.
Liu, Zhiqing, et al. "A 62-90 GHz high linearity and low noise CMOS mixer using transformer-coupling cascode topology." IEEE Access 6 (2018): 19338-19344.
Lee, Chae Jun, and Chul Soon Park. "A D-band gain-boosted current bleeding down-conversion mixer in 65 nm CMOS for chip-to-chip communication." IEEE Microwave and Wireless Components Letters 26.2 (2016): 143-145.
Kim, Dong-Hyun, and Jae-Sung Rieh. "A 135 GHz differential active star mixer in SiGe BiCMOS technology." IEEE microwave and wireless components letters 22.8 (2012): 409-411.
Lin, Yo-Sheng, et al. "6.3 mW 94 GHz CMOS down-conversion mixer with 11.6 dB gain and 54 dB LO-RF isolation." IEEE Microwave and Wireless Components Letters 26.8 (2016): 604-606.
Sun, Yaoming, and Christoph J. Scheytt. "A 122 GHz sub-harmonic mixer with a modified APDP topology for IC integration." IEEE Microwave and Wireless Components Letters 21.12 (2011): 679-681.
Parveg, Dristy, et al. "Wideband millimeter-wave active and passive mixers in 28 nm bulk CMOS technology." 2015 10th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2015.
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This work was supported by the National Key Research and Development Program of China under Grant 2016YFA0202200.
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Yang, S. A High-Linearity Down-Conversion Mixer with Modified Transconductance Stage about 120 GHz. J Infrared Milli Terahz Waves 43, 272–281 (2022). https://doi.org/10.1007/s10762-022-00856-4
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DOI: https://doi.org/10.1007/s10762-022-00856-4