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A high-Q floating active inductor using 130 nm BiCMOS technology and its application in IF band pass filter

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Abstract

In this work, the performance of floating active inductor is studied using 130 nm BiCMOS technology. A new design of floating type active inductor based on gyrator-C topology using MOSFETs and npn SiGe HBTs has been proposed. The quality factor, power consumption, noise figure, S11 and inductance value of the proposed design have been obtained and results are compared. The tradeoff between design parameters are discussed and optimal values of design components are found. The maximum value of quality factor obtained is 300 with inductive bandwidth of 0.32–2.65 GHz and power consumption of 269 µW. The design was also used in IF band pass filter for receiver applications and performance is studied in terms of gain, 1 dB compression point and IIP3. From the study, it has been observed that proposed floating type active inductor can be used in high performance RF applications compared to the applications that uses passive inductor.

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Authors and Affiliations

  1. Indian Institute of Information Technology, Allahabad, India

    Divyesh Sachan, Manish Goswami & Prasanna Kumar Misra

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  1. Divyesh Sachan
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  2. Manish Goswami
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  3. Prasanna Kumar Misra
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Correspondence to Divyesh Sachan.

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Sachan, D., Goswami, M. & Misra, P.K. A high-Q floating active inductor using 130 nm BiCMOS technology and its application in IF band pass filter. Analog Integr Circ Sig Process 96, 385–393 (2018). https://doi.org/10.1007/s10470-018-1196-3

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  • DOI: https://doi.org/10.1007/s10470-018-1196-3

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