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A high-efficiency narrow-band class-F power amplifier integrated with a microstrip suppressing cell

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Abstract

In this paper, a high-efficiency class-F power amplifier (PA) is designed using integration between a low voltage p-HEMT transistor and a miniaturized microstrip suppressing cell. It results in nth harmonic suppression and high power added efficiency (PAE) under low radio frequency (RF) input powers. The simulation is performed based on harmonic balance analysis. The proposed power amplifier is fabricated, and measurements results validated the simulations. The proposed power amplifier operates at 1.8 GHz with 100 MHz bandwidth and an average PAE of 71.1%, with very low drain voltage of 2 V. At fundamental frequency of 1.8 GHz, the maximum measured PAE is 73.5% at about 12 dBm RF input power. The maximum output power and gain are 23.4 and 17.5 dBm in RF input power ranges of 0–12 dBm, respectively. The fabricated class-F PA with such characteristics can be used for power amplifications in wireless transmitters such as 4G (4th generation)-LTE (long term evolution) communication systems.

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Authors and Affiliations

  1. Electrical Engineering Department, Kermanshah Branch, Islamic Azad University, Kermanshah, Islamic Republic of Iran

    Mohsen Hayati & Farzin Shama

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  1. Mohsen Hayati
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  2. Farzin Shama
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Correspondence to Mohsen Hayati.

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Hayati, M., Shama, F. A high-efficiency narrow-band class-F power amplifier integrated with a microstrip suppressing cell. Analog Integr Circ Sig Process 90, 351–359 (2017). https://doi.org/10.1007/s10470-016-0904-0

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  • DOI: https://doi.org/10.1007/s10470-016-0904-0

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