Abstract
ZnO:Ni nanowires have been fabricated through high-temperature vapor–solid deposition process. The morphology of the as-prepared samples was characterized by scanning electron microscopy. The temperature dependent of photoluminescence spectra was investigated. The low-temperature photoluminescence spectrum at 10–150 K shows that there is a multi-peak emission in the UV region. The multi-peak emissions are attributed to neutral acceptor-bound exciton, free electron to acceptor transition (FA), and first- and second-longitudinal optical phonon replicas emission (FA-1LO and FA-2LO), respectively. With increasing temperature, these bands show different temperature dependences. The FA and FA-1LO bands show a normal redshift with the increasing temperature, while the FX and FA-2LO bands exhibit an anomalous behavior. The origins of these bands and their temperature-dependent shifts are discussed.
References
Y. Nakayama, P.J. Pauzauskie, A. Radenovic, R.M. Onorato, R.J. Saykally, J. Liphardt, P.D. Yang, Nature (London) 447, 1098 (2007)
Z.L. Wang, Adv. Mater. 19, 889 (2007)
R. Siddheswaran, J. Savková, R. Medlín, J. Očenášek, O. Životský, P. Novak et al., Appl. Surf. Sci. 316, 524 (2014)
K. Raja, P.S. Ramesh, D. Geetha, Spectrochim. Acta A 120, 19 (2014)
T. Jan, J. Iqbal, M. Ismail, Q. Mansoor, A. Mahmood, A. Ahmad, Appl. Surf. Sci. 308, 75 (2014)
N. Goswami, A. Sahai, Mater. Res. Bull. 48, 346 (2013)
X. Chu, X. Zhu, Y. Dong, T. Chen, M. Ye, W. Sun, J. Electroanal. Chem. 676, 20 (2012)
S. Yilmaz, E. McGlynn, E. Bacaksiz, J. Cullen, R.K. Chellappan, Chem. Phys. Lett. 525–526, 72 (2012)
H. He, C.S. Lao, L.J. Chen, D. Davidovic, Z.L. Wang, J. Am. Chem. Soc. 127, 16376 (2005)
S. Filippov, X.J. Wang, M. Devika, N. Koteeswara, C.W. Tu, W.M. Chen, I.A. Buyanova, J. Appl. Phys. 113, 214302 (2013)
K.H. Kim, Z.G. Jin, Y. Abe, M. Kawamura, Mater. Lett. 149, 8 (2015)
Z.W. Pan, Z.R. Dai, Z.L. Wang, Science 2001, 291 (1947)
A. Teke, U. Ozgur, S. Dogan, X. Gu, H. Morkoc, B. Nemeth et al., Phys. Rev. B 70, 195207 (2004)
D.W. Hamby, D.A. Lucca, M.J. Klopfstein, G. Cantwell, J. Appl. Phys. 93, 3214 (2003)
B.P. Zhang, N.T. Binh, Y. Segawa, K. Wakatsuki, N. Usami, Appl. Phys. Lett. 83, 1635 (2003)
D.K. Hwang, H.S. Kim, J.H. Lim, J.Y. Oh, J.H. Yang, S.J. Park et al., Appl. Phys. Lett. 86, 151917 (2005)
X.H. Pan, W. Guo, Z.Z. Ye, B. Liu, Y. Che, H.P. He et al., J. Appl. Phys. 105, 113516 (2009)
Y.P. Varshni, Physica (Amsterdam) 34, 149 (1967)
R. Kudrawice, G. Sek, J. Misiewicz, L.H. Li, J.C. Harmand, Appl. Phys. Lett. 83, 1379 (2003)
C.K. Kim, Y.H. Lee, Appl. Phys. Lett. 79, 3038 (2001)
Acknowledgements
This work was supported by the National Natural Science Foundation of China (Grant nos. 61601397 and 60277023).
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Jiang, F., Zhang, J. Low-temperature photoluminescence study of ZnO:Ni nanowires. Appl. Phys. A 123, 548 (2017). https://doi.org/10.1007/s00339-017-1157-1
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DOI: https://doi.org/10.1007/s00339-017-1157-1