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Analysis of interface states of FeO-Al2O3 spinel composite film/p-Si diode by conductance technique

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Abstract

The interface states and series resistance properties of the Al/FeO-Al2O3/p-Si diode were investigated by the capacitance (C) and conductance (G) measurements. The measured capacitance and conductance values were corrected to eliminate the effect of series resistance to obtain the real capacitance and conductance values of the diode. The C and G characteristics indicate the presence of interface states at the interface of the diode. The interface states density, N ss, was determined using Hill–Coleman method, and it was found that the density of interface states is decreased with the frequency. The obtained results suggest that the series resistance and interface states affect significantly the electronic parameters of the Al/FeO-Al2O3/p-Si diode.

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Acknowledgments

This study was supported by King Saud University. Authors thank to KSU.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    Adem Tataroğlu

  2. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia

    Ahmed A. Al-Ghamdi & F. Yakuphanoğlu

  3. Department of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt

    Farid El-Tantawy

  4. Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia

    Farid El-Tantawy & F. Yakuphanoğlu

  5. Department of Physics, Faculty of Science, Fırat University, Elazig, Turkey

    F. Yakuphanoğlu

  6. Nanoscience and Nanotechnology Laboratory, Fırat University, Elazig, Turkey

    F. Yakuphanoğlu

  7. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia

    W. A. Farooq

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  1. Adem Tataroğlu
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  2. Ahmed A. Al-Ghamdi
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  3. Farid El-Tantawy
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  4. W. A. Farooq
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  5. F. Yakuphanoğlu
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Correspondence to Adem Tataroğlu.

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Tataroğlu, A., Al-Ghamdi, A.A., El-Tantawy, F. et al. Analysis of interface states of FeO-Al2O3 spinel composite film/p-Si diode by conductance technique. Appl. Phys. A 122, 220 (2016). https://doi.org/10.1007/s00339-016-9782-7

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