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Magnesium-doped zinc oxide nanorod–nanotube semiconductor/p-silicon heterojunction diodes

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Abstract

Nanostructured zinc oxide material is usable in electronic device applications such as light-emitting diodes, heterojunction diode, sensors, solar cell due to its interesting electrical conductivity and optical properties. Magnesium-doped zinc oxide nanorod (NR)–nanotube (NT) films were grown by microwave-assisted chemical bath deposition to fabricate ZnO-based heterojunction diode. It is found that ZnO hexagonal nanorods turn into hexagonal nanotubes when the Mg doping ratio is increased from 1 to 10 %. The values of the optical band gap for 1 % Mg-doped ZnO NR and 10 % Mg-doped ZnO NT films are found to be 3.14 and 3.22 eV, respectively. The n-ZnO:Mg/p-Si heterojunction diodes were fabricated. The diodes exhibited a rectification behavior with ideality factor higher than unity due to the presence of surface states in the junction and series resistance. The obtained results indicate that Mg doping improves the electrical and optical properties of ZnO.

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Acknowledgments

This work was supported by Anadolu University Commission of Scientific Research Projects under Grant Nos. 1402F055 and 1305F082.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Anadolu University, 26470, Eskisehir, Turkey

    Yasemin Caglar, Saliha Ilican & Mujdat Caglar

  2. Department of Chemistry, Faculty of Arts and Science, Eskisehir Osmangazi University, 26480, Eskisehir, Turkey

    Kamuran Görgün

  3. Department of Physics, Faculty of Science, Fırat University, Elazıg, Turkey

    Fahrettin Yakuphanoğlu

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  1. Yasemin Caglar
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  2. Kamuran Görgün
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  4. Mujdat Caglar
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Correspondence to Mujdat Caglar.

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Caglar, Y., Görgün, K., Ilican, S. et al. Magnesium-doped zinc oxide nanorod–nanotube semiconductor/p-silicon heterojunction diodes. Appl. Phys. A 122, 733 (2016). https://doi.org/10.1007/s00339-016-0251-0

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