Abstract
Nanoimprint lithography (NIL) is a cost-efficient nanopatterning technology because of its promising advantages of high throughput and high resolution. However, accurate multilevel overlay capability of NIL required for integrated circuit manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage in the manufacture of the coplanar structures, such as integrated plasmonic devices. In this paper, we develop a new process of planar self-alignment imprint lithography (P-SAIL) to fabricate the metallic and dielectric structures on the same plane. P-SAIL transfers the multilevel imprint processes to a single-imprint process which offers higher efficiency and less cost than existing manufacturing methods. Such concept is demonstrated in an example of fabricating planar plasmonic structures consisting of different materials.
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Acknowledgments
The work was jointly supported by the National Basic Research Program of China (Grant Nos. 2012CB921503 and 2013CB632702) and the National Natural Science Foundation of China (Grant No. 11134006). We also acknowledge the Academic Development Program of Jiangsu Higher Education (PAPD) and KAUST Baseline Research Funds.
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Wan, W., Lin, L., Xu, Y. et al. Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication. Appl. Phys. A 116, 657–662 (2014). https://doi.org/10.1007/s00339-014-8323-5
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DOI: https://doi.org/10.1007/s00339-014-8323-5