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A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction

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Abstract

A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid heterojunction. The current–voltage (I–V) characteristics of ITO/ZNAs/P3HT/Ag device in the dark and under illumination with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram.

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Acknowledgements

This work was partially supported by the National Science Foundation of China (NSFC) (Grant No. 60736005 and 60425101-1), the Foundation for Innovative Research Groups of the NSFC (Grant No. 60721001), Provincial project (Grant No. 9140A02060609DZ0208), SRF for ROCS, SEM (Grant No.GGRYJJ08-05), and Young Excellent Project of Sichuan Province (Grant No. 09ZQ026-074).

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P.R. China

    Zhaolin Yuan, Junsheng Yu, Wenming Ma & Yadong Jiang

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  1. Zhaolin Yuan
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  2. Junsheng Yu
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  3. Wenming Ma
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  4. Yadong Jiang
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Correspondence to Junsheng Yu.

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Yuan, Z., Yu, J., Ma, W. et al. A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction. Appl. Phys. A 106, 511–515 (2012). https://doi.org/10.1007/s00339-011-6756-7

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