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Exciton binding energies in organic semiconductors

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Abstract

The exciton binding energy is one of the key parameters that govern the physics of many opto-electronic organic devices. It is shown that the previously reported values for the exciton binding energies in many organic semiconductors, which differ by more than an order of magnitude, can be consistently rationalized within the framework of the charging energy of the molecular units, with a simple dependence of the exciton binding energy on the length of these units. The implications of this result are discussed.

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  1. Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, 01171, Dresden, Germany

    M. Knupfer

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71.35.-y; 78.20.-e; 78.66.Qn

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Knupfer, M. Exciton binding energies in organic semiconductors. Appl. Phys. A 77, 623–626 (2003). https://doi.org/10.1007/s00339-003-2182-9

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