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Advanced Nanomaterials and Nanotechnology pp 159–164Cite as

Synthesis and Characterization of Single and Few Layer Graphene for Field Effect Transistor

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 143))

Abstract

Single and few-layer graphene sheets with sizes up to 100 micron were synthesized using physico-chemical method by dispersing highly ordered pyrolytic graphite (HOPG) flakes into N, N-dimethylformamide (DMF) solution. The layer structure and thickness of graphene sheets were characterized with transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Synthesized graphene sheets were transferred to solid substrates for further processing. Field-effect transistor with individual graphene sheet was fabricated. In ambient conditions, graphene sheets were found to exhibit p-type behavior.

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Acknowledgements

The authors thank Dr. Gajendra, AIRF, JNU and Dr. Fouran Singh for their help in TEM measurements and Raman spectroscopic measurements respectively. One of the author PKS thanks council of scientific and industrial research for financial assistance through fellowship.

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Authors and Affiliations

  1. School of Physical Sciences, Jawaharlal Nehru University, New Delhi, 110067, India

    Pawan Kumar Srivastava & Subhasis Ghosh

Authors
  1. Pawan Kumar Srivastava
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  2. Subhasis Ghosh
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Corresponding author

Correspondence to Pawan Kumar Srivastava .

Editor information

Editors and Affiliations

  1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India

    P. K. Giri , D. K. Goswami  & A. Perumal ,  & 

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Srivastava, P.K., Ghosh, S. (2013). Synthesis and Characterization of Single and Few Layer Graphene for Field Effect Transistor. In: Giri, P.K., Goswami, D.K., Perumal, A. (eds) Advanced Nanomaterials and Nanotechnology. Springer Proceedings in Physics, vol 143. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34216-5_16

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