Abstract
Carbon nanotubes (CNT’s) grown on silicon-based substrates are of great importance because of their potential use as an interconnect material in next-generation device technologies [1]. Samples in this study consist of layered structures on a silicon substrate, where arrays of so-called “contact holes” are present. CNT’s are then grown inside the contact holes after catalyst particles have been deposited in the contacts. In order to investigate the structure of CNT’s grown inside the contact holes, transmission electron microscopy (TEM) is used.
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F. Kreupl, A.P. Grham, G.S. Duesberg, W. Steinhoegl, M. Liebau, E. Unger and W. Hoenlein, Microelectron. Eng. 64 (2002), p.399–408.
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© 2008 Springer-Verlag Berlin Heidelberg
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Ke, X., Bals, S., Romo Negreira, A., Hantschel, T., Bender, H., Van Tendeloo, G. (2008). Carbon nanotubes grown in contact holes for nano electronic applications: how to prepare TEM samples by FIB?. In: Luysberg, M., Tillmann, K., Weirich, T. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85156-1_337
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DOI: https://doi.org/10.1007/978-3-540-85156-1_337
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-85154-7
Online ISBN: 978-3-540-85156-1
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