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Physics of Semiconductor Devices pp 193–196Cite as

Two Dimensional Model for Threshold Voltage Roll-Off of Short Channel High-k Gate-Stack Double-Gate (DG) MOSFETs

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Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

In this paper a two-dimensional (2D) model of threshold voltage roll-off of uniformly doped high-k gate stack double-gate (DG) metal–oxide–semiconductor field-effect transistors (MOSFETs) is presented. The surface potential is obtained by solving the 2D Poisson’s equation using evanescent mode analysis and then it is used to model the threshold voltage roll-off. Threshold voltage roll-off variations against device channel length for different values of gate dielectric constant and silicon film thickness are shown. The modeling results show a good agreement with the numerical simulation data obtained by ATLAS™, a 2D device simulator from SILVACO.

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Author information

Authors and Affiliations

  1. Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, India

    Ekta Goel, Sanjay Kumar, Gopal Rawat, Mirgender Kumar & S. Jit

  2. Department of Electronics and Communication Engineering, Shri Ramswaroop Memorial University, Lucknow, India

    Sarvesh Dubey

Authors
  1. Ekta Goel
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  2. Sanjay Kumar
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  3. Gopal Rawat
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  4. Mirgender Kumar
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  5. Sarvesh Dubey
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  6. S. Jit
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Corresponding author

Correspondence to Ekta Goel .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Goel, E., Kumar, S., Rawat, G., Kumar, M., Dubey, S., Jit, S. (2014). Two Dimensional Model for Threshold Voltage Roll-Off of Short Channel High-k Gate-Stack Double-Gate (DG) MOSFETs. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_48

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