Abstract
A new class of semiconducting structures with δ-doped layers and a high concentration of layered quasi-two-dimensional charge carriers is currently of great interest. On one hand these layers have interesting physical properties, on the other they are promising for practical applications [1].
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References
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Lubyshev, D.I., Migal’, V.P., Ovsyuk, V.N., Semyagin, B.R., Stenin, S.I. (1992). δ-Structures in Gallium Arsenide. In: Givargizov, E.I., Grinberg, S.A., Wester, D.W. (eds) Growth of Crystals. Poct Kphctannob, Rost Kristallov, Growth of Crystals, vol 18. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3268-2_9
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DOI: https://doi.org/10.1007/978-1-4615-3268-2_9
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-306-18118-4
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