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Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition

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Abstract

We report our new raised-pressure metalorganic chemical vapor deposition (RP-MOCVD) technique and the room-temperature continuous-wave (cw) operation of GaN-based laser diodes grown using this technique. We have found that both the defect density as measured by etch-pit density and optical pumping threshold-powder density decreases as the growth pressure is increased beyond 1 atm. We fabricated GaN-based laser diodes and achieved lasing under cw conditions at 20°C. The threshold current density was 3.5 kA/cm2 and the operation voltage at threshold was 16.8 V.

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Authors and Affiliations

  1. Research Center, SONY Corporation, 2-1-1, Shinsakuragaoka, Hodogaya-ku, 240-0036, Yokohama-shi, Japan

    Katsunori Yanashima, Shigeki Hashimoto, Tomonori Hino, Kenji Funato, Toshimasa Kobayashi, Kaori Naganuma, Tsuyoshi Tojyo, Takeharu Asano, Tsunenori Asatsuma, Takao Miyajima & Masao Ikeda

Authors
  1. Katsunori Yanashima
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  2. Shigeki Hashimoto
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  3. Tomonori Hino
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  4. Kenji Funato
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  5. Toshimasa Kobayashi
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  6. Kaori Naganuma
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  7. Tsuyoshi Tojyo
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  8. Takeharu Asano
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  9. Tsunenori Asatsuma
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  10. Takao Miyajima
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  11. Masao Ikeda
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Yanashima, K., Hashimoto, S., Hino, T. et al. Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition. J. Electron. Mater. 28, 287–289 (1999). https://doi.org/10.1007/s11664-999-0028-8

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  • DOI: https://doi.org/10.1007/s11664-999-0028-8

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