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Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates

  • PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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Russian Physics Journal Aims and scope

Using the method of molecular-beam epitaxy, GaAs films are grown on Si substrates tilted from the (001) plane by 6° to the [110] direction. The GaAs films are grown both on Si surfaces terminated by arsenic atoms and on pseudo-morphic GaP/Si layers. The layers of GaAs are nucleated by the method of atomic-layer epitaxy at low temperatures. The resulting structures are found to differ in crystallographic orientation of the GaAs film with respect to the film tilt direction. The structures thus grown are examined by the methods of x-ray diffraction analysis and atomic force microscopy.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia

    E. A. Emelyanov, O. P. Pchelyakov, I. D. Loshkarev, V. A. Seleznev, M. A. Putyato, B. R. Semyagin & V. V. Preobrazhenskii

  2. National Research Tomsk State University, Tomsk, Russia

    A. P. Kokhanenko

  3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P.R. China

    Zhicuan Niu & Haiqiao Ni

Authors
  1. E. A. Emelyanov
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  2. A. P. Kokhanenko
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  3. O. P. Pchelyakov
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  4. I. D. Loshkarev
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  5. V. A. Seleznev
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  6. M. A. Putyato
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  7. B. R. Semyagin
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  8. V. V. Preobrazhenskii
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  9. Zhicuan Niu
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  10. Haiqiao Ni
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Corresponding author

Correspondence to A. P. Kokhanenko.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 49–54, January, 2013.

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Emelyanov, E.A., Kokhanenko, A.P., Pchelyakov, O.P. et al. Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates. Russ Phys J 56, 55–61 (2013). https://doi.org/10.1007/s11182-013-9994-7

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  • DOI: https://doi.org/10.1007/s11182-013-9994-7

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