This is a discussion of phenomena that conflict with a unique relationship between the tunnel current and the width of the tunnel gap during measurements of surface profiles with scanning tunnel microscopes. The emphasis is on the effect of the structure of surface electronic states on the tunnel current.
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References
B. Bhushan, Nanotribology and Nanomechanics, Springer-Verlag, Berlin, Heidelberg (2008).
V. L. Mironov, Foundations of Scanning Probe Microscopy, Inst. Fiziki Mikrostruktur RAN, N. Novgorod (2004).
J. G. Simmons, “Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating fi lm,” J. Appl. Phys., 34, 1793–1803 (1963).
T. Bohme, C. D. Simpson, K. Mullen, and J. Rabe, “Current-voltage characteristics of a homologous series of polycyclic aromatic hydrocarbons,” Eur. J. Chemistry A, 13, 7349–7357 (2007).
S. V. Veselko, A. I. Loskutov, A. M. Mandel, et al., “Features of the tunneling current from the semiconductor surface in the vicinity of the linear defect,” Nanotekhnika, 37, No. 1, 67–72 (2014).
A. M. Mandel, S. N. Grigoryev, A. I. Loskutov, et al., “Cold emission model of scanning tunneling microscopy,” J. Comp. Theor. Nanosci., 12, No. 11, 1–8 (2015).
D. O. Filatov and A. V. Kruglov, Study of Solid Surfaces by Scanning Tunneling Microscopy (STM): Laboratory Practice, N. Novg. State Univ., N. Novgorod (2001).
J. Tersoff and D. Hamann, “Theory of the scanning tunneling microscope,” Phys. Rev. B, 31, 805–813 (1985).
A. M. Mandel, A. I. Loskutov, V. B. Oshurko, et al., “Study of surface electron states in semiconductors by cold emission in scanning tunneling microscopes,” Usp. Sovr. Radioelektr., 11, 23–28 (2013).
S. N. Grigor’ev, A. M. Mandel, V. B. Oshurko, and G. I. Solomako, “Determination of the effective fractal dimensionality of nanocoatings using a magnetic fi eld,” Pisma Zh. Tekh. Fiz., 37, No. 24, 74–80 (2011).
A. M. Mandel, A. I. Loskutov, V. B. Oshurko, and G. I. Solomakho, “Determining the local fractal dimensionality of surfaces from the current-voltage characteristics of a tunnel current,” Fund. Prikl. Probl. Tekhn. Tekhnol., No. 2 (298), 56–61 (2013).
Y. Niimi, T. Matsui, H. Kambara, et al., “Scanning tunneling microscopy and spectroscopy of the electronic local density of states of graphite surfaces near monatomic step edges,” Phys. Rev. B, 73, 085421–085430 (2006).
M. Fujita, K. Wakabayashi, K. Nakada, and K. Kusakabe, “Peculiar localized state at zigzag graphite edge,” J. Phys. Soc. Jpn., 65, 1920–1923 (1996).
S. A. Bychikhin, M. O. Galyamov, V. V. Potemkin, et al., “The scanning tunnel microscope – a measurement device for nanotechnology,” Izmer. Tekhn., No. 4, 58–61 (1998).
A. Yu. Kuzin, P. A. Todua, V. I. Panov, and A. I. Oreshkin, “Use of ordered fi lms of fullerene molecules for calibration of scanning tunnel microscopes for measuring the geometric parameters of objects,” Izmer. Tekhn., No. 2, 10–15 (2013).
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Translated from Izmeritel’naya Tekhnika, No. 7, pp. 10–14, July, 2015.
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Mandel, A.M., Loskutov, A.I., Oshurko, V.B. et al. Interpretation of Scanning Tunnel Microscopy Data. Meas Tech 58, 741–746 (2015). https://doi.org/10.1007/s11018-015-0786-z
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DOI: https://doi.org/10.1007/s11018-015-0786-z