The mathematical model of the growth of a silicon carbide layer includes two diffusion equations for silicon and carbon atoms and an equation describing the motion of the chemical conversion front. Analytical estimates and results of calculations are presented. Parametric calculations for different values of silicon solubility in silicon carbide are carried out. It is shown that the effective density of carbon exerts its influence on the duration of the process of silicon impregnation and the composite morphology.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Change history
22 February 2018
Page 1165 (English translation p. 1105) after the Conclusions section there should stay: Acknowledgment. The work was supported by the King Abdul-Azis Center of Science and Technologies (Saudi Arabia).
References
B. Matović, D. Bučevac, V. Urbanović, N. Stanković, N. Daneu, T. Volkov-Husović, and B. Babic, Monolithic nanocrystalline SiC ceramics, J. Eur. Ceram. Soc., 36, 3005–3010 (2016).
B. B. Khina, A. V. Belyaev, A. A. Stefanovich, and P. A. Vityaz, Synthesis of silicon carbide using a combination of mechanical activation and self-propagating high-temperature synthesis methods, in: Modern Problems of Combustion and Its Application, 2nd Int. School-Seminar, August 30−September 4, 1997, Minsk (1997), pp. 50–53.
G. G. Gnesin, Silicon Carbide Materials [in Russian], Metallurgiya, Moscow (1977).
S. V. Digonskii and V. V. Ten, A new highly dense, fireproof material based on silicon carbide and silicon, Kompoz. Nanostrukt., No. 2, 35–55 (2010).
A. F. Il′yushchenko, V. A. Osipov, E. V. Zvonarev, and Zh. A. Vitko, Reactively bound ceramics of SiC–B4C–Si composition: production and some properties, in: Coll. of papers presented at the 9th Int. Symp. ″Powder Metallurgy,″ Belaruskaya Navuka, Minsk (2015), pp. 289–305.
S. V. Zhitnyuk, Silicon Carbide-Based Ceramics Modified by Admixtures of Eutectic Composition, Candidate′s Dissertation (in Engineering), Ross. Khim.-Tekhnol. Univ. im. D. I. Mendeleeva, Moscow (2014).
S. V. Reznik, K. V. Mikhailovskii, and P. V. Prosuntsov, Heat and mass transfer in the chemical vapor deposition of silicon carbide in a porous carbon–carbon composite material for a heat shield, J. Eng. Phys. Thermophys., 90, No. 2, 291–300 (2017).
D. S. Kukharev, A. N. Rogozhnikov, S. P. Fisenko, and S. I. Shabunya, Mathematical simulation of borating of iron. Diffusional approximation, J. Eng. Phys. Thermophys., 65, No. 2, 804–809 (1993).
V. P. Krainov, Qualitative Methods of Physical Kinetics and Hydrodynamics, AIP, New York (1992).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 90, No. 5, pp. 1162–1166, September–October, 2017.
A correction to this article is available online at https://doi.org/10.1007/s10891-018-1729-8.
Rights and permissions
About this article
Cite this article
Grinchuk, P.S., Abuhimd, H.M., Fisenko, S.P. et al. Growth of Silicon Carbide Nanolayers on Contact of Porous Carbon with Molten Silicon. J Eng Phys Thermophy 90, 1102–1106 (2017). https://doi.org/10.1007/s10891-017-1663-1
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10891-017-1663-1