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Electron doping and stability enhancement of doped graphene using a transparent polar dielectric film

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Abstract

LiF is a transparent polar dielectric with the highest band gap among known insulators. The introduction of a LiF/graphene stacked structure provides two significant advantages: mobility enhancement and the stability of the Fermi-level-modulated (doped) state without transmittance loss. The former arises from the increased screening of charged impurities by the high-dielectric environment of LiF, and the latter is due to the self-passivation effect on electron doping achieved by surface dipole interaction originating from high polarizability of LiF. Unlike unstable doping methods based on molecular adsorption or chemical bonding, the doping induced by a highly polar dielectric interface maintains stability and can be reliable method, which is compatible with the Si process.

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Acknowledgements

This work was supported by the Ministry of Trade, Industry and Energy through Technology Innovation Program (Grant No. 10044410) and Basic Science Research Program through the National Research Foundation of Korea (NRF) (Grant No. 2013R1A1A3007993) and (2010-0020207) funded by the Ministry of Education.

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Authors and Affiliations

  1. Department of Physics, Sejong University, Seoul, 143-747, South Korea

    Somyeong Shin, Hyewon Du, Taekwang Kim, Seonyeong Kim & Sunae Seo

  2. Hanwha Techwin R&D Center, 6 Pangyo-ro 319 Beon-gil, Bundang-gu, Seongnam-si, 13488, Gyeonggi-do, South Korea

    Ki Soo Kim & Seungmin Cho

  3. Samsung Advanced Institute of Technology, Suwon, South Korea

    Chang-Won Lee

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  1. Somyeong Shin
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Correspondence to Sunae Seo.

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Shin, S., Du, H., Kim, T. et al. Electron doping and stability enhancement of doped graphene using a transparent polar dielectric film. J Mater Sci 51, 748–755 (2016). https://doi.org/10.1007/s10853-015-9397-y

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