Abstract
Thin films of SnO2 were prepared by the radio frequency (13.56 MHz) sputtering technique in a wide range of oxygen/argon concentrations within the sputtering system. The films were analyzed by means of transmission and scanning electron microscopy, x-ray diffractometry and Auger electron spectroscopy. The results showed the films to be polycrystalline with an average grain size of 400 Å. Room temperature resistances of as-sputtered films showed a strong dependence on the oxygen concentration in the sputtering environment. Electrical conductivity studies of these films in oxygen and in hydrogen revealed the fundamental charge transfer mechanisms in the observed gas sensitivity of the material to be due to an interaction of the hydrogen with chemisorbed oxygen ions on the semiconductor surface. Finally, a means of providing selectivity between H2S and H2 responses was studied.
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Advani, G.N., Jordan, A.G. Thin films of SnO2 as solid state gas sensors. J. Electron. Mater. 9, 29–49 (1980). https://doi.org/10.1007/BF02655213
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DOI: https://doi.org/10.1007/BF02655213