Abstract
Etching of a natural diamond octahedron was carried out at temperatures of 800 to 1400° C and at pressures of 15 and 40 kbar under controlled oxygen partial pressure in the range 10−17 to 104 atm by use of oxygen buffers. Well-defined etch pits of equiangular triangule outline were formed. When the results were plotted based on logP O 2 versus 1/T, reversal of the pit orientation clearly occurred on a boundary curve expressed by an equation, logP O 2=−9.0×104/T+63, whereP O 2 (atm) andT (K) are oxygen partial pressure and temperature, respectively. Etch pits with the same orientation as an octahedral face were produced in a low temperature and highP O 2 region, and those with the opposite orientation, i.e. the same as for natural “trigon”, were produced in the other region.
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Yamaoka, S., Kanda, H. & Setaka, N. Etching of diamond octahedrons at high temperatures and pressure with controlled oxygen partial pressure. J Mater Sci 15, 332–336 (1980). https://doi.org/10.1007/BF02396780
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DOI: https://doi.org/10.1007/BF02396780