Skip to main content
Log in

Etching of diamond octahedrons at high temperatures and pressure with controlled oxygen partial pressure

  • Papers
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

Etching of a natural diamond octahedron was carried out at temperatures of 800 to 1400° C and at pressures of 15 and 40 kbar under controlled oxygen partial pressure in the range 10−17 to 104 atm by use of oxygen buffers. Well-defined etch pits of equiangular triangule outline were formed. When the results were plotted based on logP O 2 versus 1/T, reversal of the pit orientation clearly occurred on a boundary curve expressed by an equation, logP O 2=−9.0×104/T+63, whereP O 2 (atm) andT (K) are oxygen partial pressure and temperature, respectively. Etch pits with the same orientation as an octahedral face were produced in a low temperature and highP O 2 region, and those with the opposite orientation, i.e. the same as for natural “trigon”, were produced in the other region.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. F. C. Frank, K. E. Puttick andE. M. Wilks,Phil. Mag.3 (1958) 1262.

    Google Scholar 

  2. S. Tolansky, in “Physical Properties of Diamond”, edited by R. Berman (Clarendon Press, Oxford, 1965) pp. 140–54.

    Google Scholar 

  3. F. C. Frank andA. R. Lang,ibidin “, pp. 86–102.

    Google Scholar 

  4. C. K. R. Varma,Phil. Mag.16 (1967) 611.

    CAS  Google Scholar 

  5. A. R. Patel andS. M. Patel,Acta Cryst.A29 (1973) 571.

    Google Scholar 

  6. H. Kanda, S. Yamaoka, N. Setaka andH. Komatsu,J. Crystal Growth38 (1977) 1.

    Article  CAS  Google Scholar 

  7. T. Evans andD. H. Sauter,Phil. Mag.6 (1961) 429.

    CAS  Google Scholar 

  8. F. R. Boyd andJ. L. England,J. Geophys. Res.65 (1960) 741.

    Article  CAS  Google Scholar 

  9. O. Fukunaga, K. Takahashi, T. Fujita andJ. Yoshimoto,Mat. Res. Bull.4 (1969) 315.

    Article  CAS  Google Scholar 

  10. A. Muan,Amer. Ceram. Soc. Bull.37 (1958) 81.

    CAS  Google Scholar 

  11. W. C. Hahn, Jun., andA. Muan,Amer. J. Sci.258 (1960) 66.

    Article  CAS  Google Scholar 

  12. R. A. Swalin, in “Thermodynamics of Solids” (Wiley, New York, London, 1964) p. 81.

    Google Scholar 

  13. J. W. Harris, R. C. Henriques andH. O. A. Meyer, in “Growth of Crystals”, Vol. 7, edited by N. N. Sheftal (Consultants Bureau, New York and London, 1969) pp. 99–104.

    Google Scholar 

  14. E. G. Ehlers, in “The Interpretation of Geological Phase Diagrams” (Freeman, San Francisco, 1972) pp. 200–30.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yamaoka, S., Kanda, H. & Setaka, N. Etching of diamond octahedrons at high temperatures and pressure with controlled oxygen partial pressure. J Mater Sci 15, 332–336 (1980). https://doi.org/10.1007/BF02396780

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02396780

Keywords

Navigation